High-k gate dielectrics for CMOS technology  [electronic resource] / 
edited by Gang He and Zhaoqi Sun. 
 - Weinheim :  Wiley-VCH,  2012. 
 - xxxi, 558 p. :  ill. (some col.) 
<br/><br/>Includes bibliographical references and index. 
<br/><br/>pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. 
<br/><br/><br/>Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. 
<br/><br/><label>ISBN: </label>9783527646371 (electronic bk.) 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Dielectrics.<br/>Metal oxide semiconductors, Complementary.
<br/><br/><label>Index Terms--Genre/Form: </label><br/>Electronic books.
<br/><br/><label>LC Class. No.: </label>QC585  / .H54 2012 
<br/><br/><label>Dewey Class. No.: </label>538.24