01707nam a2200385 a 4500 EBC956000 MiAaPQ 20250821121444.0 m o d | cr cn||||||||| 130212s2012 gw a sb 001 0 eng d 9783527330324 9783527646371 (electronic bk.) (MiAaPQ)EBC956000 (Au-PeEL)EBL956000 (CaPaEBR)ebr10653595 (CaONFJC)MIL372274 (OCoLC)798536325 MiAaPQ MiAaPQ MiAaPQ QC585 .H54 2012 538.24 23 High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun. Weinheim : Wiley-VCH, 2012. xxxi, 558 p. : ill. (some col.) Includes bibliographical references and index. pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. Dielectrics. 426841 Metal oxide semiconductors, Complementary. 426842 Electronic books. 35142 He, Gang. 426843 Sun, Zhaoqi. 426844 ProQuest (Firm) 426845 https://ebookcentral.proquest.com/lib/kuct-ebooks/detail.action?docID=956000 Click to View 287503 287503