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High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun.

Contributor(s): Material type: TextTextPublication details: Weinheim : Wiley-VCH, 2012.Description: xxxi, 558 p. : ill. (some col.)ISBN:
  • 9783527646371 (electronic bk.)
Subject(s): Genre/Form: DDC classification:
  • 538.24 23
LOC classification:
  • QC585 .H54 2012
Online resources:
Contents:
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
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Includes bibliographical references and index.

pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.

Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.

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